si4963dy vishay siliconix document number: 70665 s-20036?rev. b, 04-mar-02 www.vishay.com 2-1 dual p-channel 2.5-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 0.033 @ v gs = ?4.5 v ?6.2 ?20 0.050 @ v gs = ?2.5 v ?5 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 d 1 p-channel mosfet s 2 g 2 d 2 d 2 p-channel mosfet
parameter symbol limit unit drain-source voltage v ds ?20 gate-source voltage v gs 12 v t a = 25 c ?6.2 continuous drain current (t j = 150 c) a t a = 70 c i d ?4.9 pulsed drain current i dm ?40 a continuous source current (diode conduction) a i s ?1.7 t a = 25 c 2.0 maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
si4963dy vishay siliconix www.vishay.com 2-2 document number: 70665 s-20036 ? rev. b, 04-mar-02 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.6 1.4 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = ? 20 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v, t j = 55 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v ? 20 a v gs = ? 4.5 v, i d = ? 6.2 a 0.027 0.033 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 5 a 0.04 0.050 forward transconductance a g fs v ds = ? 10 v, i d = ? 6.2 a 20 s diode forward voltage a v sd i s = ? 1.7 a, v gs = 0 v ? 1.2 v dynamic b total gate charge q g 22 35 gate-source charge q gs v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 6.2 a 7 nc gate-drain charge q gd 3.5 turn-on delay time t d(on) 27 50 rise time t r v dd = ? 10 v, r l = 10 32 50 turn-off delay time t d(off) v dd = ? 10 v, r l = 10 i d ? 1 a, v gen = ? 10 v, r g = 6 95 150 ns fall time t f 45 70 source-drain reverse recovery time t rr i f = ? 1.7 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. for design aid only; not subject to production testing.
si4963dy vishay siliconix document number: 70665 s-20036 ? rev. b, 04-mar-02 www.vishay.com 2-3 0 8 16 24 32 40 012345 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 0 900 1800 2700 3600 4500 048121620 0 8 16 24 32 40 01234 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs = 5 thru 3.5 v 3 v v gs ? gate-to-source voltage (v) ? drain current (a) i d t c = ? 55 c 125 c ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 6.2 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 6.2 a t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c 2 v 1.5 v 2.5 v
si4963dy vishay siliconix www.vishay.com 2-4 document number: 70665 s-20036 ? rev. b, 04-mar-02 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j ? temperature ( c) time (sec) power (w) 0.00 0.02 0.04 0.06 0.08 0.10 012345 ? 0.3 0.0 0.3 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 6.2 a i d = 250 a variance (v) v gs(th) 40 10 1 0 0.2 0.4 0.8 1.0 1.6 0 6 12 18 24 30 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm t j = 150 c t j = 25 c 0.6 1.2 1.4
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